
	Part Number	Hot Search : SW121340 WP934 C0251A CS4299 6011C VP0345N1 L211658 244MT
	Product Description
	Full Text Search

BC850CL - 16Mb EDO/FPM - OBSOLETE TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 100MA I(C) | SOT-23 晶体管|晶体管|叩| 30V的五（巴西）总裁| 100mA的一（c）| SOT - 23封装

BC850CL_1750634.PDF Datasheet

Part No.

BC850CL BC849CL

Description

File Size

76.38K / 1 Page

Maker

Electronic Theatre Controls, Inc.

JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: BC850C

Maker: INFINEON

Pack:

Stock: Reserved

Unit price for :

50: $0.04

100: $0.04

1000: $0.03

Email: oulindz@gmail.com

Contact us

Homepage

Download

[ BC850CL BC849CL Datasheet PDF Downlaod from IC-ON-LINE.CN

]
[ BC850CL BC849CL Datasheet PDF Downlaod from Datasheet.HK

]
[BC850CL BC849CL Datasheet PDF Downlaod from Maxim4U.com

] :-)

[ View it Online ] [ Search more for BC850CL ]

[ Price & Availability of BC850CL by FindChips.com ]

Related Part Number

PART	Description	Maker
BC369-10	16Mb EDO/FPM - OBSOLETE 晶体	SIEMENS AG
HYB5117400BJ-60 HYB5117400BJ-50 HYB5116400BJ-60 HY	4M x 4 Bit 2k 5 V 60 ns FPM DRAM 4M x 4 Bit 4k 5 V 60 ns FPM DRAM 4M x 4 Bit 2k 3.3 V 60 ns FPM DRAM 4M x 4 Bit 4k 3.3 V 60 ns FPM DRAM 4M x 4 Bit 2k 3.3 V 50 ns FPM DRAM 4M x 4 Bit 4k 3.3 V 50 ns FPM DRAM -4M x 4-Bit Dynamic RAM 4M x 4-Bit Dynamic RAM 2k & 4k Refresh (Fast Page Mode) From old datasheet system	Infineon SIEMENS[Siemens Semiconductor Group]
HYB5117800BSJ-60 HYB5117800BSJ-50 HYB5117800-60 HY	2M x 8 Bit 2k 5 V 60 ns FPM DRAM 2M x 8 Bit 2k 3.3 V 60 ns FPM DRAM 2M x 8 Bit 2k 3.3 V 50 ns FPM DRAM 2M x 8 - Bit Dynamic RAM 2k Refresh (Fast Page Mode) 2M x 8-Bit Dynamic RAM From old datasheet system	Infineon SIEMENS[Siemens Semiconductor Group]
KMM53616000BK	16MB X 36 DRAM Simm Using 16MB X 4 & 16MBx1	Samsung Semiconductor
HYB3165805ATL-60 HYB3165805ATL-50 HYB3165805ATL-40	4M x 16 Bit 4k EDO DRAM Low Power 8M x 8 Bit 4k EDO DRAM 8M x 8 Bit 8k EDO DRAM 8M x 8-Bit Dynamic RAM (4k & 8k Refresh, EDO-Version) From old datasheet system	Infineon SIEMENS[Siemens Semiconductor Group]
HYB3117400BJ-50 HYB3117400BJ-60 HYB3117400BJ-70 HY	4M x 4 Bit FPM DRAM 3.3 V 4k 50 ns 4M x 4 Bit FPM DRAM 3.3 V 4k 60 ns -3.3V 4M x 4-Bit Dynamic RAM	Infineon SIEMENS[Siemens Semiconductor Group]
NESG2101M16 NESG2101M16-T3	NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR 邻舍npn型硅锗高频陈德良SIS的职权范	NEC, Corp. NEC[NEC]
MT4LC1M16C3DJ-6 MT4LC1M16C3DJ-6S MT4LC1M16C3TG-6 M	FPM DRAM	MICRON[Micron Technology]
MT55L512Y36P MT55L512Y32P MT55L1MY18P	16Mb: 512K x 36，Flow-Through ZBT SRAM(16Mb流通式同步静态存储器) 16Mb: 512K x 32，Flow-Through ZBT SRAM(16Mb流通式同步静态存储器) 16Mb: 1 Meg x 18, Flow-Through ZBT SRAM(16Mb流通式同步静态存储器)	Micron Technology, Inc.
IS41C82002-50TI IS41LV82002-50T IS41C82002-60T IS4	x8 EDO Page Mode DRAM x8 EDO公司页面模式的DRAM 2M X 8 EDO DRAM, 60 ns, PDSO28 2M X 8 EDO DRAM, 50 ns, PDSO28	Atmel, Corp. INTEGRATED SILICON SOLUTION INC

Related keyword From Full Text Search System

BC850CL Epitaxial	BC850CL npn transistor	BC850CL transformer	BC850CL Reference	BC850CL prezzo baumer
BC850CL Analog	BC850CL single	BC850CL differential	BC850CL availability	BC850CL microchip